ICP Inductively Coupled Plasma Etch System. For applications requiring a downstream, high density plasma source. Allows for higher plasma densities at lower pressures. Tight anisotropy in high aspect ratio structures and reduces microloading effect. Four MFC gas inputs mounted in separate cabinet. System has turbo pump and roughing pump. Two RFX-600 13.56 MHz RF generators. 200mm substrate chuck.
Free-standing unit with integrated cart, motorized Z-axis, auto focus, X-Y beam positioning system with RACER™ motion technology, self-adjusting spring loaded sealed bearings, stationary processing table, Quick Change Laser Cartridge™ shielded optics, interchangeable focusing optics, flash upgradeable electronics, job complete indicator, system status indicator, relocatable origin, enhanced vector cutting, 3D engraving and rubber stamp mode. 32” x 18” work area.
