CONTACT ALIGNER MA8

Description: CORAL Name: SussMA8
This system utilizes 1X contact lithography to transfer photomask patterns onto substrates
Specifications / Capabilities:
• UV broadband (350 nm to 450 nm), I-line (365 nm) and G-line (436 nm) wavelength available. Contact super-user for installing I-line or G-line filters.
• Exposure methods: flood, proximity, soft and hard contacts, low vacuum and vacuum contacts.
• Mask size: 2.5"x 2.5", 4"x 4", 5"x 5" and 7"x 7"
• Wafer size for Top-Side Alignment: up to 6" in diameter (small samples, 2",3",4" and 6").
• Wafer size for Bottom-Side Alignment: 3", 4", and 6" chucks
• Maximum wafer thickness: 3 mm
Scientific Opportunities / Applications:
• The machine is exclusively intended for use as an alignment and/or exposure device for substrates used in Semiconductor and Microsystems Technology

University Tag Number: 
171648
Serial Number: 
572
Availability: 
Contact Custodian for availability
Location
Research II
Room Number: 
122B
Acquisition Date: 
June 1, 2004