TRION TECHNOLOGY PHANTOM II
ICP Inductively Coupled Plasma Etch System. For applications requiring a downstream, high density plasma source. Allows for higher plasma densities at lower pressures. Tight anisotropy in high aspect ratio structures and reduces microloading effect. Four MFC gas inputs mounted in separate cabinet. System has turbo pump and roughing pump. Two RFX-600 13.56 MHz RF generators. 200mm substrate chuck.
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June 1, 2004